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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2085 DESCRIPTION *With TO-220 package *High breakdown voltage *High transition frequency APPLICATIONS *For line-operated AF amplifier and chrominance output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-220) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 300 300 5 0.1 0.15 10 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2085 TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=100A ;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=100A ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=100mA ;IB=10mA 5.0 V VBE Base-emitter on voltage IC=50mA ; VCE=10V 1.2 V A ICEO Collector cut-off current VCE=300V;IB=0 20 ICBO Collector cut-off current VCB=300V;IE=0 10 A IEBO Emitter cut-off current VEB=5V; IC=0 10 A hFE-1 DC current gain IC=10mA ; VCE=10V 30 hFE -2 DC current gain IC=50mA ; VCE=10V 30 150 COB Output capacitance IE=0; VCB=30V;f=1MHz 8 pF fT Transition frequency IC=20mA ; VCE=30V 55 MHz hFE-2 classifications P 30-60 Q 50-100 R 80-150 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2085 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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